VELOCITY DEPENDENCE OF MAXIMUM SUBSTITUTIONAL CONCENTRATIONS OF IN AND BI TRAPPED IN RAPIDLY SOLIDIFIED SI

被引：10

作者：

CAMPISANO, SU ^{[1
]}

POATE, JM ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07924

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 05期

关键词：

D O I：

10.1063/1.96100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：485 / 487

页数：3

共 16 条

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BAERI, P ;

FOTI, G ;

POATE, JM ;

CAMPISANO, SU ;

CULLIS, AG .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :800-802

[2]

BAERI P, 1981, APPL PHYS LETT, V37, P912

[3]

Baeri P., 1982, LASER ANNEALING SEMI

[4]

CAHN JW, 1980, LASER ELECTRON BEAM, P89

[5] NON-EQUILIBRIUM DOPANTS INCORPORATION IN SILICON MELTED BY LASER-PULSES [J].

CAMPISANO, SU .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (04) :195-211

[6] OSCILLATORY MORPHOLOGICAL INSTABILITIES DUE TO NON-EQUILIBRIUM SEGREGATION [J].

CORIELL, SR ;

SEKERKA, RF .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :499-508

[7] GROWTH INTERFACE BREAKDOWN DURING LASER RECRYSTALLIZATION FROM THE MELT [J].

CULLIS, AG ;

HURLE, DTJ ;

WEBBER, HC ;

CHEW, NG ;

POATE, JM ;

BAERI, P ;

FOTI, G .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :642-644

[8]

CULLIS AG, UNPUB

[9]

FELDMAN LC, 1983, MATERIALS ANAL ION C

[10] STABILITY OF PLANAR INTERFACE DURING SOLIDIFICATION OF DILUTE BINARY ALLOY [J].

MULLINS, WW ;

SEKERKA, RF .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :444-&

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