共 8 条
- [2] MOBILITY IN EPITAXIAL GAAS UNDER 1-MEV ELECTRON-IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 4118 - 4119
- [3] TYPE CONVERSION IN ELECTRON-IRRADIATED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2970 - 2972
- [4] Lang D. V., 1977, I PHYS C SER, V31, P70
- [5] LOOK DC, IN PRESS J APPL PHYS
- [6] INTERPRETATION OF DEEP-LEVEL OPTICAL SPECTROSCOPY AND DEEP-LEVEL TRANSIENT SPECTROSCOPY DATA - APPLICATION TO IRRADIATION DEFECTS IN GAAS [J]. PHYSICAL REVIEW B, 1984, 30 (10): : 5822 - 5834
- [7] IRRADIATION-INDUCED DEFECTS IN GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20): : 3839 - 3871
- [8] IRRADIATION-INDUCED DEFECTS IN PARA-TYPE GAAS [J]. PHYSICAL REVIEW B, 1986, 34 (06): : 4048 - 4058