REACTIVE INTERFACE FORMATION-PT/SI(111) - NUCLEATION AND MORPHOLOGY

被引：7

作者：

NEMANICH, RJ ^{[1
]}

DOLAND, CM ^{[1
]}

PONCE, FA ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583724

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1039 / 1043

页数：5

共 15 条

[1]

[Anonymous], POWDER DIFFRACTION F

[2]

KAWARADA H, 1984, MATER RES SOC S P, V25, P429

[3] CHEMICAL-REACTIONS AT PT/OXIDE/SI AND TI/OXIDE/SI INTERFACES [J].

LIEHR, M ;

LEGOUES, FK ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1985, 3 (03) :983-986

[4] MORPHOLOGICAL AND CHEMICAL CONSIDERATIONS FOR THE EPITAXY OF METALS ON SEMICONDUCTORS [J].

LUDEKE, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :400-406

[5] CHEMICAL-REACTION AND SILICIDE FORMATION AT THE PT/SI INTERFACE [J].

MATZ, R ;

PURTELL, RJ ;

YOKOTA, Y ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02) :253-258

[6] THE OXYGEN EFFECT IN THE GROWTH-KINETICS OF PLATINUM SILICIDES [J].

NAVA, F ;

VALERI, S ;

MAJNI, G ;

CEMBALI, A ;

PIGNATEL, G ;

QUEIROLO, G .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6641-6646

[7]

Nemanich R. J., 1984, MATER RES SOC S P, V25, P9

[8] THICKNESS DEPENDENCE OF THE REACTIONS AT THE INTERFACE OF PD AND SI(111) [J].

NEMANICH, RJ ;

DOLAND, CM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1142-1145

[9]

NEMANICH RJ, 1986, MATER RES SOC S P, V54, P255

[10] SI(111)-PT INTERFACE AT ROOM-TEMPERATURE - A SYNCHROTRON RADIATION PHOTOEMISSION-STUDY [J].

ROSSI, G ;

ABBATI, I ;

BRAICOVICH, L ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1982, 25 (06) :3627-3636

← 1 2 →