THICKNESS DEPENDENCE OF THE REACTIONS AT THE INTERFACE OF PD AND SI(111)

被引：8

作者：

NEMANICH, RJ

DOLAND, CM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583070

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1142 / 1145

页数：4

共 20 条

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