STRUCTURE OF S ON A PASSIVATED GAP(100) SURFACE

被引：14

作者：

LU, ZH

GRAHAM, MJ

机构：

[1] Institute for Microstructural Sciences, National Research Council of Canada, Ottawa

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 11期

关键词：

D O I：

10.1063/1.357032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopy (XPS), chemical state-specific photoelectron diffraction (XPD), and photoelectric polarization-dependent sulfur K-edge x-ray absorption near-edge structure (XANES) have been used to determine the structure of S on GaP(100) surfaces passivated in a (NH4)2S solution. XPS shows that S forms chemical bonds only with Ga. XPD and XANES measurements show that the Ga-S bond is a well-ordered bridge bond in the [011] azimuth.

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页码：7567 / 7569

页数：3

相关论文

共 11 条

[1] EPITAXIAL FILM CRYSTALLOGRAPHY BY HIGH-ENERGY AUGER AND X-RAY PHOTOELECTRON DIFFRACTION [J].

CHAMBERS, SA .

ADVANCES IN PHYSICS, 1991, 40 (04) :357-415

[2] X-RAY PHOTOELECTRON AND AUGER-ELECTRON FORWARD SCATTERING - A NEW TOOL FOR SURFACE CRYSTALLOGRAPHY [J].

EGELHOFF, WF .

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1990, 16 (03) :213-235

[3]

FADLEY CS, 1992, ADV SURFACE SCI, P421

[4]

HAASE J, 1990, PHOTOEMISSION ABSORP, P302

[5] ELECTRONIC PASSIVATION OF GAP SURFACES USING (NH4)2S TREATMENT [J].

JEDRAL, L ;

RUDA, HE ;

SODHI, R ;

MA, H ;

MANNIK, L .

CANADIAN JOURNAL OF PHYSICS, 1992, 70 (10-11) :1050-1056

[6] STRUCTURE OF S-PASSIVATED INP(100)-(1X1) SURFACE [J].

LU, ZH ;

GRAHAM, MJ ;

FENG, XH ;

YANG, BX .

APPLIED PHYSICS LETTERS, 1992, 60 (22) :2773-2775

[7] STRUCTURE OF S ON PASSIVATED GAAS (100) [J].

LU, ZH ;

GRAHAM, MJ ;

FENG, XH ;

YANG, BX .

APPLIED PHYSICS LETTERS, 1993, 62 (23) :2932-2934

[8] DETERMINATION OF THE STRUCTURE OF GAAS(100)-S WITH CHEMICAL-STATE-SPECIFIC PHOTOELECTRON DIFFRACTION [J].

LU, ZH ;

GRAHAM, MJ .

PHYSICAL REVIEW B, 1993, 48 (07) :4604-4607

[9] UNIVERSAL PASSIVATION EFFECT OF (NH4)2SX TREATMENT ON THE SURFACE OF III-V COMPOUND SEMICONDUCTORS [J].

OIGAWA, H ;

FAN, JF ;

NANNICHI, Y ;

SUGAHARA, H ;

OSHIMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (3A) :L322-L325

[10]

SANDROFF CJ, 1987, APPL PHYS LETT, V50, P256