ELECTRONIC PASSIVATION OF GAP SURFACES USING (NH4)2S TREATMENT

被引：13

作者：

JEDRAL, L ^{[1
]}

RUDA, HE ^{[1
]}

SODHI, R ^{[1
]}

MA, H ^{[1
]}

MANNIK, L ^{[1
]}

机构：

[1] ONTARIO HYDRO,DIV RES,TORONTO M8Z 5S4,ONTARIO,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1992年 / 70卷 / 10-11期

关键词：

D O I：

10.1139/p92-169

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The influence of (NH4)2S treatment on the surface properties of GaP is presented for the first time. Changes in the chemical composition and Fermi level position are characterized using X-ray photoelectron spectroscopy. These measurements show that after surface treatment, the GaP surface is free of native oxides. A strong enhancement (approximately 50 times) in the cathodo-luminescent efficiency was observed for sulfur passivated samples. Schottky diode characteristics were used to reveal changes in the barrier height and interface state density due to surface treatment. Changes in carrier concentration were also found to be reflected in measured Raman spectra. The passivation mechanism is also briefly discussed.

引用

页码：1050 / 1056

页数：7

共 21 条

[1]

Andrade JD, 1985, SURFACE INTERFACIAL, P105, DOI DOI 10.1007/978-1-4684-8610-0_5

[2]

[Anonymous], 2013, CATHODOLUMINESCENCE

[3] XPS - ENERGY CALIBRATION OF ELECTRON SPECTROMETERS .1. AN ABSOLUTE, TRACEABLE ENERGY CALIBRATION AND THE PROVISION OF ATOMIC REFERENCE LINE ENERGIES [J].