THEORETICAL-STUDY OF THE PIEZOELECTRIC EFFECT ON GAAS-MESFETS ON (100), (011), AND (111BAR) GA, AND (111) AS SUBSTRATES

被引：10

作者：

ONODERA, T

NISHI, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1580 / 1585

页数：6

共 19 条

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[9] COMPARISON OF THE ORIENTATION EFFECT OF SIO2-ENCAPSULATEED AND SI3N4-ENCAPSULATED GAAS-MESFETS [J].

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[10] CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J].

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