EXTERNAL STRESS EFFECT ON GAAS-MESFET CHARACTERISTICS

被引：7

作者：

KANAMORI, M ^{[1
]}

ONO, H ^{[1
]}

FURUTSUKA, T ^{[1
]}

MATSUI, J ^{[1
]}

机构：

[1] NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

关键词：

D O I：

10.1109/EDL.1987.26612

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：228 / 230

页数：3

共 7 条

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[2] PIEZOELECTRIC EFFECTS IN GAAS-FETS AND THEIR ROLE IN ORIENTATION-DEPENDENT DEVICE CHARACTERISTICS
ASBECK, PM
LEE, CP
CHANG, MCF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1377 - 1380
[3] ION-IMPLANTED E/D-TYPE GAAS IC TECHNOLOGY
FURUTSUKA, T
TSUJI, T
KATANO, F
HIGASHISAKA, A
KURUMADA, K
[J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 944 - 945
[4] Kanamori M., 1985, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1985 (Cat. No.85CH2182-4), P49
[5] COMPARISON OF THE ORIENTATION EFFECT OF SIO2-ENCAPSULATEED AND SI3N4-ENCAPSULATED GAAS-MESFETS
OHNISHI, T
ONODERA, T
YOKOYAMA, N
NISHI, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) : 172 - 174
[6] IMPROVEMENT IN GAAS-MESFET PERFORMANCE DUE TO PIEZOELECTRIC EFFECT
ONODERA, T
OHNISHI, T
YOKOYAMA, N
NISHI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2314 - 2318
[7] 1962, KYODO SEKKEI DATA BO