AMORPHIZATION AND REGROWTH IN SI COSI2 SI HETEROSTRUCTURES

被引:20
作者
MAEX, K
WHITE, AE
SHORT, KT
HSIEH, YF
HULL, R
OSENBACH, JW
PRAEFCKE, HC
机构
[1] AT&T BELL LABS,READING,PA 19603
[2] INTERUNIV MICROELECTR CTR,LOUVAIN,BELGIUM
关键词
D O I
10.1063/1.346977
中图分类号
O59 [应用物理学];
学科分类号
摘要
Reduction of the defect density in the Si overlayer of Si/CoSi 2/Si heterostructures fabricated by mesotaxy has been achieved by selective amorphization and regrowth of the Si. Layer-by-layer regrowth of the silicide with an activation energy of 1.14 eV has also been clearly shown.
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页码:5641 / 5647
页数:7
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