FURNACE AND CW AR LASER-INDUCED SOLID-PHASE EPITAXIAL REGROWTH OF SOS FILMS IMPLANTED WITH SI, SI + B, P, AND P + B IONS

被引：10

作者：

GOLECKI, I ^{[1
]}

KINOSHITA, G ^{[1
]}

PAINE, BM ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

SEMICONDUCTOR DEVICE MANUFACTURE - Silicon on Sapphire Technology;

D O I：

10.1016/0029-554X(81)90795-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

CVD SOS epitaxial films, 0. 15-0. 65 mu m thick, have been implanted with Si or P ions, with or without an additional 10**2**0 B/cm**3 implant, and recrystallized in the solid phase by means of furnace annealing (FA) or cw Ar laser irradiation (LI). The films have been analyzed by Mev He** plus channeling, SIMS, and surface resistance measurements. The results are presented and discussed.

引用

页码：675 / 682

页数：8

共 26 条

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