ON PROXIMITY EXPOSURE COMPENSATION IN ELECTRON-BEAM LITHOGRAPHY

被引：6

作者：

DESHMUKH, PR

KHOKLE, WS

机构：

来源：

关键词：

D O I：

10.1109/16.34285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2011 / 2017

页数：7

共 15 条

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[3]

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[4]

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[5]

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[6] EXPOSURE MODEL FOR ELECTRON-SENSITIVE RESISTS [J].

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[8]

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[9]

KRUGER JB, 1984, VLSI ELECTRONICS, V18, P91

[10]

KYSER DF, 1974, 6TH P INT C EL ION B, P205