EFFECTS OF ELECTRON-BEAM IRRADIATION AND SUBSTRATE-TEMPERATURE ON THE PHYSICAL-PROPERTIES OF EVAPORATED A-SI-C THIN-FILMS

被引：3

作者：

AUDAS, RD

MOORE, CJL

STURTEVANT, TEW

JOHNSON, GW

LESLIE, JD

BRODIE, DE

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1985年 / 63卷 / 06期

关键词：

D O I：

10.1139/p85-135

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：838 / 841

页数：4

相关论文

共 15 条

[11] NEW DEVELOPMENT IN STUDY OF AMORPHOUS SILICON HYDROGEN ALLOYS - STORY OF O [J].

PAESLER, MA ;

ANDERSON, DA ;

FREEMAN, EC ;

MODDEL, G ;

PAUL, W .

PHYSICAL REVIEW LETTERS, 1978, 41 (21) :1492-1495

[12] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

SPEAR, WE ;

LECOMBER, PG .

SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196

[13] THICKNESS AND DOPING EFFECTS OBSERVED IN IMPURE VACUUM-DEPOSITED A-SI FILMS [J].

TALUKDER, G ;

COWAN, JA ;

BRODIE, DE ;

LESLIE, JD .

CANADIAN JOURNAL OF PHYSICS, 1984, 62 (09) :848-852

[14]

TAUC J, 1974, AMORPHOUS LIQUID SEM, P243

[15] QUALITY OF VACUUM-DEPOSITED FILMS [J].

VINCETT, PS ;

BARLOW, WA ;

ROBERTS, GG .

NATURE, 1975, 255 (5509) :542-544