DEFORMATION POTENTIAL LO-PHONON RAMAN-SCATTERING NEAR THE EO-GAP IN ALXGA1-XAS-ALLOY - EXCITONIC EFFECTS

被引:6
作者
GAVRILENKO, VI
TRALLEROGINER, C
CARDONA, M
BAUSER, E
机构
关键词
D O I
10.1016/0038-1098(84)90162-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:459 / 463
页数:5
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[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]   OPTICAL-PROPERTIES OF ALXGA1-XAS [J].
ASPNES, DE ;
KELSO, SM ;
LOGAN, RA ;
BHAT, R .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767
[3]   ELECTROREFLECTANCE SPECTRA OF ALXGA1-X AS ALLOYS [J].
BEROLO, O ;
WOOLLEY, JC .
CANADIAN JOURNAL OF PHYSICS, 1971, 49 (10) :1335-&
[4]   PREPARATION AND PROPERTIES OF ALAS-GAAS MIXED CRYSTALS [J].
BLACK, JF ;
KU, SM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :249-&
[5]   DEFORMATION POTENTIALS AT THE VALENCE-BAND MAXIMUM IN SEMICONDUCTORS [J].
BREY, L ;
CHRISTENSEN, NE ;
CARDONA, M .
PHYSICAL REVIEW B, 1987, 36 (05) :2638-2644
[6]  
CARDONA M, 1982, TOP APPL PHYS, V50, P19
[7]   MOLECULAR BEAM EPITAXY AND OPTICAL EVALUATION OF A1XGA1-XAS [J].
CHO, AY ;
STOKOWSK, SE .
SOLID STATE COMMUNICATIONS, 1971, 9 (09) :565-&
[8]   THEORY OF LATTICE RAMAN SCATTERING IN INSULATORS [J].
GANGULY, AK ;
BIRMAN, JL .
PHYSICAL REVIEW, 1967, 162 (03) :806-+
[9]  
GAVRILENKO VI, 1976, SOV PHYS SEMICOND+, V10, P185
[10]   ONE-PHONON RESONANCE RAMAN-SCATTERING [J].
GINER, CT ;
COSTA, OS .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 127 (01) :121-130