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QUANTUM-WELL INTERMIXING WITH HIGH SPATIAL SELECTIVITY USING A PULSED-LASER TECHNIQUE

被引：23
作者：
MCLEAN, CJ
MCKEE, A
LULLO, G
BRYCE, AC
DELARUE, RM
MARSH, JH
机构：
[1] Department of Electronics and Electrical Engineering, University of Glasgow
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 15期
关键词：
OPTICAL WAVE-GUIDES; SEMICONDUCTOR QUANTUM WELLS; BAND STRUCTURE; LASER BEAM APPLICATIONS;
D O I：
10.1049/el:19950868
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors demonstrate a new quantum well intermixing technique which allows bandgap shifts of typically 100meV to be realised with a high spatial resolution in a GaInAs/GaInAsP MQW waveguide structure. The material was irradiated with pulses from a Q-switched Nd:YAG laser, and was then subjected to rapid thermal annealing at 700 degrees C for several minutes. The spatial resolution of the disordering process was investigated across a masked interface, and was determined to be less than or equal to 25 mu m.
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页码：1285 / 1286
页数：2
相关论文
共 6 条
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