LPE GROWTH TECHNIQUES FOR FABRICATING ABRUPT ZINC-DOPED AND MAGNESIUM-DOPED P+-N INGAASP/INP HETEROJUNCTIONS

被引:5
作者
TABATABAIEALAVI, K [1 ]
MARKUNAS, RJ [1 ]
FONSTAD, CG [1 ]
机构
[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
关键词
D O I
10.1149/1.2124374
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2085 / 2088
页数:4
相关论文
共 29 条
[21]   PHASE-DIAGRAM CALCULATIONS FOR INUGA1-UPVAS1-V LATTICE MATCHED TO (111-B) INP, IN THE TEMPERATURE-RANGE 600-660-DEGREES-C [J].
PEREA, EH ;
FONSTAD, CG .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :331-335
[22]   INGAASP-INP DOUBLE-HETEROSTRUCTURE PHOTO-DIODES [J].
SAKAI, S ;
UMENO, M ;
AMEMIYA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (09) :1701-1702
[23]   NEARLY EQUILIBRIUM GROWTH OF IN1-XGAXASYP1-Y (0 LESS-THAN-OR-EQUAL-TO Y LESS-THAN-OR-EQUAL-TO 1) LATTICE-MATCHED TO (100) INP [J].
TABATABAIEALAVI, K ;
PEREA, EH ;
FONSTAD, CG .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :591-603
[24]  
TABATABIALAVI K, 1979, IEDM DIG TECH PAPERS, P643
[25]   INGAASP-INP AVALANCHE PHOTO-DIODE [J].
TAKANASHI, Y ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) :2065-2066
[26]  
TIEN PK, 1979, APPL PHYS LETT, V34, P701, DOI 10.1063/1.90611
[27]   DIFFUSION PROFILES OF ZINC IN INDIUM-PHOSPHIDE [J].
TUCK, B ;
HOOPER, A .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (15) :1806-1821
[28]  
WADA O, 1980, J ELECTROCHEM SOC, V127, P2287
[29]  
YAMATO T, 1980, IEEE J QUANTUM ELECT, V14, P95