MICROSCOPIC STRUCTURE OF HYDROGEN SHALLOW-DONOR COMPLEXES IN CRYSTALLINE SILICON

被引：71

作者：

ZHANG, SB

CHADI, DJ

机构：

[1] Xerox Palo Alto Research Center, Palo Alto

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.41.3882

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new low-energy structural model for interstitial hydrogen in P- and As-doped crystalline Si is proposed. The calculated H-vibrational frequencies of 1290 cm-1 for the stretching mode and 715 cm-1 for the wagging mode are in much closer agreement with infrared data of 1555 and 809 cm-1, respectively, than for any previously suggested model. © 1990 The American Physical Society.

引用

页码：3882 / 3884

页数：3

共 22 条

[1]

[Anonymous], 1937, EINF HRUNG QUANTENCH

[2] STRUCTURE OF ACCEPTOR-HYDROGEN AND DONOR-HYDROGEN COMPLEXES IN SILICON FROM UNIAXIAL-STRESS STUDIES [J].