MASKED GROWTH OF INGAASP-BASED QUANTUM-WELLS FOR OPTOELECTRONIC DEVICE APPLICATIONS

被引：11

作者：

CHEN, Y

CHIU, TH

ZUCKER, JE

CHU, SNG

机构：

[1] AT and T Bell Laboratories, Holmdel

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 14期

关键词：

D O I：

10.1063/1.108612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate selective area growth of lattice-matched InGaAsP/InP, and strained InGaAs/Inp and InAsP/InP multiple quantum wells on SiO2-masked InP substrate by chemical beam epitaxy. This method can be used to produce quantum well p-i-n waveguide modulators with a single growth step. Photoluminescence measurements performed on waveguide stripes ranging, from 1-50 mum in width reveal a red shift of the band edge with decreasing stripe width in InGaAsP/InP and InGaAs/InP quantum well systems, but no shift in InAsP/InP quantum wells for stripe widths larger than 1 mum. In addition, we find that this band-gap tunability is stripe orientation dependent.

引用

页码：1641 / 1643

页数：3

共 6 条

[1] HIGH-SPEED (10 GBIT/S) AND LOW-DRIVE-VOLTAGE (1V PEAK TO PEAK) INGAAS/INGAASP MQW ELECTROABSORPTION-MODULATOR INTEGRATED DFB LASER WITH SEMIINSULATING BURIED HETEROSTRUCTURE
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[3] SELECTIVE AREA EPITAXY OF INP/GAINASP HETEROSTRUCTURES BY MOMBE
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[5] DFB LASERS WITH MONOLITHICALLY INTEGRATED PASSIVE WAVE-GUIDE
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[6] SEMICONDUCTOR-LASERS FABRICATED BY SELECTIVE AREA EPITAXY
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