GIGAHERTZ-BAND HIGH-GAIN LOW-NOISE AGC AMPLIFIERS IN FINE-LINE NMOS

被引：64

作者：

JINDAL, RP

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 04期

关键词：

D O I：

10.1109/JSSC.1987.1052765

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：512 / 521

页数：10

共 23 条

[1] GIGAHERTZ TRANSRESISTANCE AMPLIFIERS IN FINE LINE NMOS [J].

ABIDI, AA .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (06) :986-994

[2] A DESIGN AND PACKAGING TECHNIQUE FOR A HIGH-GAIN, GIGAHERTZ-BAND SINGLE-CHIP AMPLIFIER [J].

AKAZAWA, Y ;

ISHIHARA, N ;

WAKIMOTO, T ;

KAWARADA, K ;

KONAKA, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (03) :417-423

[3]

CLAXTON D, 1977, MAY P IEEE NAECON 77, P1078

[4] HIGH-SPEED LOW-POWER CIRCUITS FABRICATED USING A SUB-MICRON NMOS TECHNOLOGY [J].

FICHTNER, W ;

HOFSTATTER, EA ;

WATTS, RK ;

BAYRUNS, RJ ;

BECHTOLD, PF ;

JOHNSTON, RL ;

BOULIN, DM .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :662-664

[5]

FRASER DL, 1983, ISSCC, P80

[6] A HIGH-GAIN GAAS AMPLIFIER WITH AN AGC FUNCTION [J].

IMAI, Y ;

KATO, N ;

OHWADA, K ;

SUGETA, T .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (10) :415-417

[7]

Jindal R. P., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P68

[8] NOISE ASSOCIATED WITH DISTRIBUTED RESISTANCE OF MOSFET GATE STRUCTURES IN INTEGRATED-CIRCUITS [J].

JINDAL, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1505-1509

[9] GENERAL NOISE CONSIDERATIONS FOR GIGABIT-RATE NMOSFET FRONT-END DESIGN FOR OPTICAL-FIBER COMMUNICATION-SYSTEMS [J].

JINDAL, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :305-309

[10] NOISE ASSOCIATED WITH SUBSTRATE CURRENT IN FINE-LINE NMOS FIELD-EFFECT TRANSISTORS [J].

JINDAL, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1047-1052

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