DECOMPOSITION EQUILIBRIUM OF ARSINE AND LOW-PRESSURE DOPING OF EPITAXIAL CVD SILICON

被引：10

作者：

KOKOVIN, GA ^{[1
]}

TESTOVA, NA ^{[1
]}

TITOV, AA ^{[1
]}

MORGENSTERN, T ^{[1
]}

KUHNE, H ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST HALBLEITERPHYS,DDR-1200 FRANKFURT,GER DEM REP

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1985年 / 20卷 / 12期

关键词：

D O I：

10.1002/crat.2170201206

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1583 / 1593

页数：11

共 11 条

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[2]

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[3]

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[4] ON THE ADSORPTION-REFERRED AND EQUILIBRIUM-REFERRED INTERPRETATION OF THE DOPING ELEMENT INCORPORATION DURING THE GROWTH OF CVD EPITAXIAL SILICON [J].

KUHNE, H .

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[5] KINETICS OF THE INCORPORATION OF DOPANTS INTO EPITAXIAL CVD SILICON [J].

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[6] INCORPORATION OF DOPANTS INTO EPITAXIAL CVD-SILICON LAYERS AND INCORPORATION EQUILIBRIUM [J].

KUHNE, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (11) :1379-1387

[7] TOTAL PRESSURE-DEPENDENCE OF DOPING ELEMENT INCORPORATION DURING THE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON [J].

KUHNE, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (02) :181-187

[8] LOW-PRESSURE SILICON EPITAXY [J].

OGIRIMA, M ;

SAIDA, H ;

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MAKI, M .

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[9]

RAICHOUDHURY P, 1960, J CRYST GROWTH, V7, P361

[10] COMPUTER-SIMULATION IN SILICON EPITAXY [J].

REIF, R ;

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