SOME FEATURES OF THE BLUE LUMINESCENCE IN V-SI(1-X)GE(X)O-2

被引：22

作者：

GINZBURG, LP ^{[1
]}

GORDEEV, AA ^{[1
]}

GORCHAKOV, AP ^{[1
]}

JILINSKY, AP ^{[1
]}

机构：

[1] MOSCOW TECH UNIV COMMUN & INFORMAT,CTR SCI RES,105855 MOSCOW,RUSSIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 183卷 / 03期

关键词：

D O I：

10.1016/0022-3093(95)00217-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A physical model explaining some features of the blue luminescence in v-Si(1 - x)Ge(x)O-2 is proposed. The model is based on the energy level arrangement of Si-2(0)(Ge-2(0)) defects and especially on the theoretically predicted closeness to the conduction band edge. This model enables an interpretation of the blue luminescence frequency dependence upon x and temperature, the latter being related to the interval 20-1000 degrees C. A principle test of the model comes from the thermal behaviour of the luminescence intensity.

引用

页码：234 / 242

页数：9

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