GENERATION OF MISFIT DISLOCATIONS IN GAAS GROWN ON SI

被引：53

作者：

TSAI, HL

MATYI, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 03期

关键词：

D O I：

10.1063/1.101924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：265 / 267

页数：3

共 8 条

[1] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J].

BIEGELSEN, DK ;

PONCE, FA ;

SMITH, AJ ;

TRAMONTANA, JC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1856-1859

[2] NEW TYPE OF SOURCE GENERATING MISFIT DISLOCATIONS [J].

HAGEN, W ;

STRUNK, H .

APPLIED PHYSICS, 1978, 17 (01) :85-87

[3]

HULL R, 1987, APPL PHYS LETT, V50, P853

[4] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[5] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J].

MATTHEWS, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :126-133

[6] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE [J].

OTSUKA, N ;

CHOI, C ;

NAKAMURA, Y ;

NAGAKURA, S ;

FISCHER, R ;

PENG, CK ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :277-279

[7] DEFECT STRUCTURES AT THE GAAS/SI INTERFACE AFTER ANNEALING [J].

TSAI, HL ;

LEE, JW .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :130-132

[8]

TSAI HL, 1987, 45TH P ANN M EL MICR, P340

← 1 →