STUFFING OF NOBLE-METALS INTO ANODIZED POROUS SILICON BY DIRECT EVAPORATION

被引：13

作者：

ITO, T

HIRAKI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 08期

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D O I：

10.1143/JJAP.26.1219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1219 / 1223

页数：5

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