DEGRADATION OF GAP GREEN LEDS

被引：21

作者：

KANEKO, K ^{[1
]}

机构：

[1] SONY CORP,RES CTR,YOKOHAMA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 07期

关键词：

D O I：

10.1143/JJAP.15.1287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1287 / 1296

页数：10

共 21 条

[1] BULK DEGRADATION OF GAP RED LEDS [J].

BERGH, AA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) :166-&

[2] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1960-&

[3] THERMALLY STIMULATED CURRENT MEASUREMENTS AND THEIR CORRELATION WITH EFFICIENCY AND DEGRADATION IN GAP LEDS [J].

FABRE, E ;

BHARGAVA, RN .

APPLIED PHYSICS LETTERS, 1974, 24 (07) :322-324

[4] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS [J].

GERSHENZON, M ;

LOGAN, RA ;

NELSON, DF .

PHYSICAL REVIEW, 1966, 149 (02) :580-+

[5] PERMANENT DEGRADATION OF GAAS TUNNEL DIODES [J].

GOLD, RD ;

WEISBERG, LR .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :811-821

[6] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[7] DEGRADATION AND PASSIVATION OF GAP LIGHT-EMITTING DIODES [J].

HARTMAN, RL ;

SCHWARTZ, B ;

KUHN, M .

APPLIED PHYSICS LETTERS, 1971, 18 (07) :304-&

[8] CHANGES IN GAAS ELECTROLUMINESCENT DIODES INDUCED BY CONTINUOUS OPERATION [J].

JACOBUS, WN .

SOLID-STATE ELECTRONICS, 1967, 10 (03) :260-+

[9] NEW METHOD OF GROWING GAP CRYSTALS FOR LIGHT-EMITTING DIODES [J].

KANEKO, K ;

AYABE, M ;

DOSEN, M ;

MORIZANE, K ;

USUI, S ;

WATANABE, N .

PROCEEDINGS OF THE IEEE, 1973, 61 (07) :884-890

[10] EFFICIENT RED LEDS OF GAP BY VAPOR-PHASE DOPING OF ZINC [J].

KANEKO, K ;

DOSEN, M ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (11) :1732-1736

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