LAYERED AND HOMOGENEOUS FILMS OF ALUMINUM AND ALUMINUM SILICON WITH TITANIUM AND TUNGSTEN FOR MULTILEVEL INTERCONNECTS

被引:19
作者
GARDNER, DS [1 ]
MICHALKA, TL [1 ]
SARASWAT, KC [1 ]
BARBEE, TW [1 ]
MCVITTIE, JP [1 ]
MEINDL, JD [1 ]
机构
[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
关键词
D O I
10.1109/JSSC.1985.1052281
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
39
引用
收藏
页码:94 / 103
页数:10
相关论文
共 39 条
  • [11] FISCHER F, 1984, 1984 P INT REL PHYS
  • [12] Gardner D. S., 1984, 1984 Proceedings of the First International IEEE VLSI Multilevel Interconnection Conference (Cat. No. 84CH1992-2), P68
  • [13] GARDNER DS, 1984, 42ND P ANN DEV RES C
  • [14] GARDNER DS, 1984, DEC IEDM
  • [15] ELECTROMIGRATION TESTING OF TI-W-AL AND TI-W-AL-CU FILM CONDUCTORS
    GHATE, PB
    BLAIR, JC
    [J]. THIN SOLID FILMS, 1978, 55 (01) : 113 - 123
  • [16] HANSEN M, 1958, CONSITUTION BINARY A
  • [17] HINODE K, 1983, ELECTROCHEM SOC M, V83, P678
  • [18] HOFFMAN RW, 1966, USE THIN FILMS PHYSI
  • [19] INTERMETALLIC COMPOUNDS OF AL AND TRANSITIONS METALS - EFFECT OF ELECTROMIGRATION IN 1-2-MUM-WIDE LINES
    HOWARD, JK
    WHITE, JF
    HO, PS
    [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4083 - 4093
  • [20] IYER SS, 1984, 1984 P INT REL PHYS