STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF WIDE-BAND GAP AMORPHOUS-CARBON SILICON ALLOYS

被引：27

作者：

DECESARE, G ^{[1
]}

GALLUZZI, F ^{[1
]}

GUATTARI, G ^{[1
]}

LEO, G ^{[1
]}

VINCENZONI, R ^{[1
]}

BEMPORAD, E ^{[1
]}

机构：

[1] UNIV ROMA LA SAPIENZA,DIPARTIMENTO INGN CHIM MAT MAT PRIME & MET,I-00185 ROME,ITALY

来源：

关键词：

D O I：

10.1016/0925-9635(93)90221-M

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated carbon-silicon alloys with carbon fraction X(C) between 0.2 and 0.8 have been deposited and characterized. For X(C) less-than-or-equal-to 0.5 it is shown that Si/SiC phases whose electronic properties can be optimized by using an H-2 dilution higher than 90% and a substrate temperature T(d) almost-equal-to 300-degrees-C are preferentially deposited. For X(C) > 0.5 the deposited material contains polymer-like phases which are responsible for high optical transparency and poor electronic properties.

引用

页码：773 / 777

页数：5

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