LIQUID-PHASE EPITAXIAL-GROWTH OF (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASER MATERIAL IN A SAPPHIRE BOAT

被引：8

作者：

REYNOLDS, CL

TAMARGO, MC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.330395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：9217 / 9219

页数：3

相关论文

共 16 条

[11] USE OF SAPPHIRE LINERS TO ELIMINATE EDGE GROWTH IN LPE (AL,GA)AS [J].

TAMARGO, MC ;

REYNOLDS, CL .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (02) :325-329

[12]

TAMARGO MC, UNPUB

[13] LOW THRESHOLD CURRENT-DENSITY INGAASP-INP LASERS GROWN IN A VERTICAL LIQUID-PHASE EPITAXIAL SYSTEM [J].

TAMARI, N ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :185-189

[14] LIQUID-PHASE EPITAXIAL-GROWTH OF 6-LAYER GAAS-(GAAL)AS STRUCTURES FOR INJECTION LASERS WITH 0.04 MU-M THICK CENTER LAYER [J].

THOMPSON, GH ;

KIRKBY, PA .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :70-85

[15]

Touloukian Y.S., 1970, THERMOPHYSICAL PROPE, V1st

[16] THE HIGH-TEMPERATURE (55-DEGREES-C-70-DEGREES-C) DEVICE CHARACTERISTICS OF CW (AIGA)AS DOUBLE-HETEROSTRUCTURE PROTON-BOMBARDED STRIPE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT ;

HOLBROOK, WR ;

FRALEY, PE .

APPLIED PHYSICS LETTERS, 1981, 38 (01) :6-9