LOCALIZATION-DEPENDENT THERMALIZATION OF EXCITONS IN GAAS/ALXGA1-X AS QUANTUM WELLS

被引:18
作者
COLVARD, C [1 ]
BIMBERG, D [1 ]
ALAVI, K [1 ]
MAIERHOFER, C [1 ]
NOURI, N [1 ]
机构
[1] TECH UNIV BERLIN,INST FESTKORPERPHYS 1,D-1000 BERLIN 12,FED REP GER
来源
PHYSICAL REVIEW B | 1989年 / 39卷 / 05期
关键词
D O I
10.1103/PhysRevB.39.3419
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3419 / 3422
页数:4
相关论文
共 13 条
[1]   CATHODOLUMINESCENCE ATOMIC SCALE IMAGES OF MONOLAYER ISLANDS AT GAAS/GAALAS INTERFACES [J].
BIMBERG, D ;
CHRISTEN, J ;
FUKUNAGA, T ;
NAKASHIMA, H ;
MARS, DE ;
MILLER, JN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1191-1197
[2]  
Bimberg D., 1986, Solid State Devices 1985. Invited Papers Presented at the 15th European Solid State Device Research Conference, P101
[3]   MODIFICATION OF THE ELECTRON-PHONON INTERACTIONS IN GAAS-GAALAS HETEROJUNCTIONS [J].
BRUMMELL, MA ;
NICHOLAS, RJ ;
HOPKINS, MA ;
HARRIS, JJ ;
FOXON, CT .
PHYSICAL REVIEW LETTERS, 1987, 58 (01) :77-80
[4]   LOCALIZATION INDUCED ELECTRON-HOLE TRANSITION RATE ENHANCEMENT IN GAAS QUANTUM WELLS [J].
CHRISTEN, J ;
BIMBERG, D ;
STECKENBORN, A ;
WEIMANN, G .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :84-86
[5]  
CHRISTEN J, UNPUB
[6]  
DEVAUD B, 1986, J APPL PHYS, V59, P1633
[7]   CALCULATED EFFICIENCIES OF PRACTICAL GAAS AND SI SOLAR CELLS INCLUDING EFFECT OF BUILT-IN ELECTRIC FIELDS [J].
ELLIS, B ;
MOSS, TS .
SOLID-STATE ELECTRONICS, 1970, 13 (01) :1-+
[8]   RECOMBINATION ENHANCEMENT DUE TO CARRIER LOCALIZATION IN QUANTUM WELL STRUCTURES [J].
GOBEL, EO ;
JUNG, H ;
KUHL, J ;
PLOOG, K .
PHYSICAL REVIEW LETTERS, 1983, 51 (17) :1588-1591
[9]   TEMPERATURE-DEPENDENT OPTICAL-SPECTRA OF SINGLE QUANTUM-WELLS FABRICATED USING INTERRUPTED MOLECULAR-BEAM EPITAXIAL-GROWTH [J].
KOTELES, ES ;
ELMAN, BS ;
JAGANNATH, C ;
CHEN, YJ .
APPLIED PHYSICS LETTERS, 1986, 49 (21) :1465-1467
[10]  
KOTELES ES, 1987, SPIE C P BELL, V792, P304