共 14 条
- [1] CHANG KJ, 1988, PHYS REV LETT, V60, P2187
- [2] COLLINS RW, 1988, MATER RES SOC S P, V118, P19
- [3] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
- [4] HYDROGEN INCORPORATION IN UNDOPED MICROCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1988, 53 (17) : 1626 - 1628
- [5] PANKOVE JI, 1984, SEMICONDUCTORS SEMIM, V21
- [6] RADICAL SPECIES IN ARGON-SILANE DISCHARGES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 544 - 546
- [7] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196
- [8] THERMAL EQUILIBRATION IN DOPED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 3030 - 3033
- [9] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (16) : 1187 - 1190
- [10] MECHANISMS OF THERMAL EQUILIBRATION IN DOPED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1988, 37 (08): : 4209 - 4224