LASERS FOR INTEGRATED OPTOELECTRONICS

被引：3

作者：

BOULEY, JC

机构：

来源：

PHYSICA B & C | 1985年 / 129卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90558-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：107 / 118

页数：12

共 39 条

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APPLIED PHYSICS LETTERS, 1984, 44 (10) :941-943

[2] BURIED HETEROSTRUCTURE ALGAAS LASERS ON SEMI-INSULATING SUBSTRATES [J].

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URY, I ;

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[3] SHORT-CAVITY GAALAS LASER BY WET CHEMICAL ETCHING [J].

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[4]

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[5]

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[6]

BOULEY JC, 1978, APPL PHYS LETT, V15, P327

[7] LOW THRESHOLD AND LOW DISPERSION MOCVD LPE BURIED-HETEROSTRUCTURE GAAS/GAALAS LASERS [J].

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RIOU, J ;

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DUGRAND, L .

ELECTRONICS LETTERS, 1984, 20 (21) :857-859

[8]

Carney J. K., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P48

[9]

CARTER A, 1979, ELECT LETT, V18, P74

[10] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].

COLDREN, LA ;

IGA, K ;

MILLER, BI ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683

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