HIGH-ENERGY STIMULATED-EMISSION IN GAAS QUANTUM-WELLS COUPLED WITH (SI2)X(GAAS)1-X BARRIERS (H-OMEGA-GREATER-THAN-APPROXIMATELY-EL,EX)

被引:7
作者
HSIEH, KC
KALISKI, RW
HOLONYAK, N
BURNHAM, RD
THORNTON, RL
PAOLI, TL
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
关键词
D O I
10.1063/1.96666
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:943 / 945
页数:3
相关论文
共 9 条
[1]  
ALFEROV ZI, 1982, SOV PHYS SEMICOND+, V16, P532
[2]   QUANTUM-WELL ALGA1-XAS-GAAS LASERS WITH INTERNAL (SI2)(GAAS)1-X BARRIERS [J].
BURNHAM, RD ;
HOLONYAK, N ;
HSIEH, KC ;
KALISKI, RW ;
NAM, DW ;
THORNTON, RL ;
PAOLI, TL .
APPLIED PHYSICS LETTERS, 1986, 48 (12) :800-802
[3]   WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION [J].
CAMRAS, MD ;
HOLONYAK, N ;
BURNHAM, RD ;
STREIFER, W ;
SCIFRES, DR ;
PAOLI, TL ;
LINDSTROM, C .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5637-5641
[4]   STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].
CAMRAS, MD ;
BROWN, JM ;
HOLONYAK, N ;
NIXON, MA ;
KALISKI, RW ;
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6183-6189
[5]   DETERMINATION OF INDIRECT BAND EDGE OF GAAS BY QUANTUM-WELL BANDFILLING (LZ-100 A) [J].
DUPUIS, RD ;
DAPKUS, PD ;
KOLBAS, RM ;
HOLONYAK, N .
SOLID STATE COMMUNICATIONS, 1978, 27 (05) :531-533
[6]  
DUPUIS RD, 1985, J APPL PHYS, V58, pR31
[7]   QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
DUPUIS, RD ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186
[8]  
LANDSBERG PT, 1967, SOLID STATE ELECTRON, V10, P512
[9]  
MOSS TS, 1973, SEMICONDUCTOR OPTOEL, P298