DRY CLEANING OF SI SURFACE CONTAMINATION BY REACTIVE SPUTTER ETCHING

[1] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[2] Hosokawa N, 1974, JPN J APPL PHYS S, V13, P435

[3] KERN W, 1970, RCA REV, V31, P207

[4] KERN W, 1970, RCA REV, V31, P187

[5] KERN W, 1970, RCA REV, V31, P234

[6] MATUSO S, 1980, J VAC SCI TECHNOL, V17, P587

[7] STUDY OF DRY ETCHING-RELATED CONTAMINATIONS ON SI AND SIO2 [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 858 - 865

[8] QUANTITATIVE-ANALYSIS OF NA IN SI WITH SIMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (09) : 1697 - 1698

[9] ROBINSON JW, 1974, HDB SPECTROSCOPY, V1, P724

[10] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &

[1] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[2] Hosokawa N, 1974, JPN J APPL PHYS S, V13, P435

[3] KERN W, 1970, RCA REV, V31, P207

[4] KERN W, 1970, RCA REV, V31, P187

[5] KERN W, 1970, RCA REV, V31, P234

[6] MATUSO S, 1980, J VAC SCI TECHNOL, V17, P587

[7] STUDY OF DRY ETCHING-RELATED CONTAMINATIONS ON SI AND SIO2 [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 858 - 865

[8] QUANTITATIVE-ANALYSIS OF NA IN SI WITH SIMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (09) : 1697 - 1698

[9] ROBINSON JW, 1974, HDB SPECTROSCOPY, V1, P724

[10] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &