MODELING AND DESIGN OF GAAS-MESFET CONTROL DEVICES FOR BROAD-BAND APPLICATIONS

被引：29

作者：

JAIN, N ^{[1
]}

GUTMANN, RJ ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1990年 / 38卷 / 02期

关键词：

D O I：

10.1109/22.46418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, closed-form expressions are developed for the small-signal parameters of broad-band GaAs control MESFETs. The theoretical conducting-state resistance and nonconducting-state capacitance are compared with experimental data and demonstrate the usefulness of the models. Additionally, we considered the power handling capability of these devices and describe the various limitations in both conducting and nonconducting states. Our models show that self-aligned gate devices (SAGFET's) have a broad-band cutoff-frequency figure of merit as much as twice that of conventional MESFET's, although the voltage handling capability of the SAGFET is considerably inferior. © 1990 IEEE

引用

页码：109 / 117

页数：9

共 8 条

[1]

AYASLI Y, 1982, MICROWAVE J, V25, P61

[2] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J].

FUKUI, H .

BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03) :771-797

[3] CHARACTERIZATION OF LINEAR AND NONLINEAR PROPERTIES OF GAAS-MESFETS FOR BROAD-BAND CONTROL APPLICATIONS [J].

GUTMANN, RJ ;

FRYKLUND, DJ .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (05) :516-521

[4] A NEW SELF-ALIGN TECHNOLOGY FOR GAAS ANALOG MMICS [J].

HAGIO, M ;

KATSU, S ;

KAZUMURA, M ;

KANO, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (06) :754-758

[5]

HALL PM, 1968, THIN SOLID FILMS, V1, P277

[6] FUNDAMENTAL LIMITATIONS IN RF SWITCHING + PHASE SHIFTING USING SEMICONDUCTOR DIODES [J].

HINES, ME .

PROCEEDINGS OF THE IEEE, 1964, 52 (06) :697-&

[7]

SMYTHE WR, 1968, STATIC DYNAMIC ELECT, P101

[8] A MESFET VARIABLE-CAPACITANCE MODEL FOR GAAS INTEGRATED-CIRCUIT SIMULATION [J].

TAKADA, T ;

YOKOYAMA, K ;

IDA, M ;

SUDO, T .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (05) :719-724

← 1 →