FAST-DIFFUSING DEFECTS INDUCED BY COPPER IN SILICON

被引：28

作者：

PRESCHA, T ^{[1
]}

ZUNDEL, T ^{[1
]}

WEBER, J ^{[1
]}

PRIGGE, H ^{[1
]}

GERLACH, P ^{[1
]}

机构：

[1] WACKER CHEMITRON GMBH,W-8263 BURGHAUSEN,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90220-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：79 / 82

页数：4

共 12 条

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[4] QUENCHED-IN, FAST-DIFFUSING DEFECTS IN SILICON STUDIED BY THE PERTURBED ANGULAR-CORRELATION METHOD [J].

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[5]

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[6]

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[7]

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[8] INDIUM-DEFECT COMPLEXES IN SILICON STUDIED BY PERTURBED ANGULAR-CORRELATION SPECTROSCOPY [J].

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KELLER, R ;

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (01) :59-85

[9]

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[10]

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