OXYGEN PRECIPITATION IN ANTIMONY-DOPED SILICON-WAFERS

被引：11

作者：

DARAGONA, FS

FEJES, PL

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.96737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：665 / 667

页数：3

共 12 条

[1]

DARAGONA FS, 1985, VLSI SCI TECHNOLOGY, P106

[2] THE EFFECT OF DOPING ON THE FORMATION OF SWIRL DEFECTS IN DISLOCATION-FREE CZOCHRALSKI-GROWN SILICON-CRYSTALS [J].

DEKOCK, AJR ;

VANDEWIJGERT, WM .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :718-734

[3]

Dyson W., 1984, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications, P107

[4]

FEJES PJ, 1985, VLSI SCI TECHNOLOGY, P118

[5] PRECIPITATION OF OXYGEN IN SILICON [J].

FREELAND, PE ;

JACKSON, KA ;

LOWE, CW ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :31-33

[6]

HAHN S, 1985, VLSI SCI TECHNOLOGY, P96

[7]

HIRTH JP, 1963, PROG MATER SCI, V11, P1

[8]

INOUE N, 1981, SEMICONDUCTOR SILICO, P282

[9]

PEARCE CW, 1982, VLSI SCI TECHNOLOGY, P53

[10] DISLOCATION ETCH FOR (100) PLANES IN SILICON [J].

SECCODARAGONA, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) :948-+

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