EPITAXIAL METAL-SEMICONDUCTOR INTERFACES

被引：4

作者：

WEITERING, HH

机构：

[1] Department of Physics, University of Pennsylvania, Philadelphia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 14卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0921-5107(92)90310-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present understanding of the relationship between the interface structure and Schottky barrier height of epitaxial metal-semiconductor contacts is reviewed. The shortcomings of the surface science approach for studying Schottky barriers will be demonstrated and it is argued that a detailed knowledge of the structural properties of buried interfaces is a prerequisite for a full understanding of the Schottky barrier problem. Finally, it will be shown how molecular beam epitaxy can be used to fabricate a new class of epitaxial metal-semiconductor interfaces.

引用

收藏

页码：281 / 290

页数：10

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