LOW-TEMPERATURE FORMATION OF METAL MOLECULAR-BEAM EPITAXY-GAAS(100) INTERFACES - APPROACHING IDEAL CHEMICAL AND ELECTRONIC LIMITS

被引:61
作者
VITURRO, RE
CHANG, S
SHAW, JL
MAILHIOT, C
BRILLSON, LJ
TERRASI, A
HWU, Y
MARGARITONDO, G
KIRCHNER, PD
WOODALL, JM
机构
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期
关键词
D O I
10.1116/1.584791
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1007 / 1012
页数:6
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