CATHODOLUMINESCENCE STUDY OF A SILICON DIOXIDE LAYER ON SILICON WITH AID OF AUGER-ELECTRON SPECTROSCOPY

被引：18

作者：

KOYAMA, H

MATSUBARA, K

MOURI, M

机构：

[1] COMP DEV LABS LTD, ITAMI, HYOGO 664, JAPAN

[2] KYOTO UNIV, FAC ENGN, SAKYO KU, KYOTO 606, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 12期

关键词：

D O I：

10.1063/1.323546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5380 / 5381

页数：2

共 8 条

[1] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J].

GWYN, CW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4886-+

[2] SELECTIVE ELECTRON-BEAM IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

MACDONALD, NC ;

EVERHART, TE .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2433-+

[3] RADIATION-INDUCED SPACE-CHARGE BUILDUP IN MOS STRUCTURES [J].

MITCHELL, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :764-+

[4] STUDY OF SIO LAYERS ON SI USING CATHODOLUMINESCENCE SPECTRA [J].

MITCHELL, JP ;

DENURE, DG .

SOLID-STATE ELECTRONICS, 1973, 16 (07) :825-839

[5] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES [J].

SNOW, EH ;

GROVE, AS ;

FITZGERALD, DJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1168-+

[6] SPACE-CHARGE MODEL FOR SURFACE POTENTIAL SHIFTS IN SILICON PASSIVATED WITH THIN INSULATING LAYERS [J].

THOMAS, JE ;

YOUNG, DR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :368-+

[7] ELECTRON-IRRADIATION EFFECT IN AUGER ANALYSIS OF SIO2 [J].

THOMAS, S .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :161-166

[8] RELATION BETWEEN E] CENTERS + HYDROXYL BONDS IN SILICA [J].

WEEKS, RA ;

LELL, E .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1932-&

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