SELECTIVE ELECTRON-BEAM IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES

被引：29

作者：

MACDONALD, NC

EVERHART, TE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.1656572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2433 / +

页数：1

共 44 条

[1]

BAKISH R, 1965, ELECTRON ION BEAM ED, P5

[2] MULTIPLE SCATTERING OF 5-30 KEV ELECTRONS IN EVAPORATED METAL FILMS .2. RANGE-ENERGY RELATIONS [J].

COSSLETT, VE ;

THOMAS, RN .

BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (11) :1283-&

[3] SIMULTANEOUS OBSERVATION OF DIFFUSION-INDUCED DISLOCATION SLIP PATTERNS IN SI WITH ELECTRON BEAM SCANNING + OPTICAL MEANS [J].

CZAJA, W ;

WHEATLEY, GH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2782-&

[4] OBSERVATIONS OF INDIVIDUAL DISLOCATIONS AND OXYGEN PRECIPITATES IN SILICON WITH A SCANNING ELECTRON BEAM METHOD [J].

CZAJA, W ;

PATEL, JR .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) :1476-&

[5] RESPONSE OF SI AND GAP P-N JUNCTIONS TO A 5- TO 40-KEV ELECTRON BEAM [J].

CZAJA, W .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4236-&

[6]

Evekhart T.E., 1959, J ELECT CONTROL, V7, P97, DOI 10.1080/00207215908937191

[7] NOVEL METHOD OF SEMICONDUCTOR DEVICE MEASUREMENTS [J].

EVERHART, TE ;

MATTA, RK ;

WELLS, OC .

PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1642-&

[8] EVALUATION OF PASSIVATED INTEGRATED CIRCUITS USING THE SCANNING ELECTRON MICROSCOPE [J].

EVERHART, TE ;

WELLS, OC ;

MATTA, RK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) :929-936

[9] REVERSIBLE CHANGES IN TRANSISTOR CHARACTERISTICS CAUSED BY SCANNING ELECTRON MICROSCOPE EXAMINATION [J].

GREEN, D ;

SANDOR, JE ;

OKEEFFE, TW ;

MATTA, RK .

APPLIED PHYSICS LETTERS, 1965, 6 (01) :3-&

[10] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

← 1 2 3 4 5 →