X-RAY STUDIES OF HIGH-QUALITY GAN GROWN ON 0001 SAPPHIRE

被引：3

作者：

PLANO, WE ^{[1
]}

MAJOR, JS ^{[1
]}

WELCH, DF ^{[1
]}

SPEIRS, J ^{[1
]}

机构：

[1] PHILLIPS ELECTR INSTRUMENTS,MAHWAH,NJ 07430

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 24期

关键词：

GALLIUM PHOSPHIDE; X-RAY MICROSCOPY;

D O I：

10.1049/el:19941392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-ray data are presented on high crystalline quality GaN grown on basal plane (0001) sapphire by MOCVD. An X-ray rocking curve displaying Pendellosung fringes and having an FWHM of 27 s(-1) is reported for a 0.7 mu m thick film. Reciprocal space mapping of the (0002) GaN reflection is presented.

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页码：2079 / 2081

页数：3

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