ELECTRON-IRRADIATION EFFECTS IN LEAD-ALLOY JOSEPHSON-JUNCTIONS

被引：4

作者：

LEE, YH

BROSIOUS, PR

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 04期

关键词：

D O I：

10.1063/1.93094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：347 / 349

页数：3

共 9 条

[1]

BAKER JM, 1982, J VAC SCI TECHNOL, V20, pR20

[2]

BOLTON DN, 1973, THESIS RENSSELAER PO

[3]

BROSIOUS P, UNPUB IBM TECH DISCL

[4]

CORBETT JW, 1966, ELECTRON RAD DAMAGE

[5] FABRICATION PROCESS FOR JOSEPHSON INTEGRATED-CIRCUITS [J].

GREINER, JH ;

KIRCHER, CJ ;

KLEPNER, SP ;

LAHIRI, SK ;

WARNECKE, AJ ;

BASAVAIAH, S ;

YEN, ET ;

BAKER, JM ;

BROSIOUS, PR ;

HUANG, HCW ;

MURAKAMI, M ;

AMES, I .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :195-205

[6] PROCESS CHARACTERIZATION OF JOSEPHSON CIRCUITS [J].

GREINER, JH ;

KLEPNER, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :262-267

[7]

OEN OS, 1973, ORNL4897 PUBL

[8]

SONDER E, 1972, POINT DEFECTS SOLIDS, V1, P201

[9] DEFECT DISTRIBUTION NEAR-SURFACE OF ELECTRON-IRRADIATED SILICON [J].

WANG, KL ;

LEE, YH ;

CORBETT, JW .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :547-548

← 1 →