HIGH-PERFORMANCE CARBON-DOPED BASE GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOCVD

被引：9

作者：

TWYNAM, JK

SATO, H

KINOSADA, T

机构：

[1] SHARP Corporation, Central Research Laboratories, Tenri, Nara 632

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 02期

关键词：

BIPOLAR DEVICES; TRANSISTORS;

D O I：

10.1049/el:19910092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance HBTs with a carbon-doped base layer (p = 4 X 10(19) cm-3) are reported. The use of carbon as a p-type dopant allows the emitter-base pn junction to be accurately positioned relative to the heterojunction, and the MOCVD growth method ensures consistency and uniformity of the wafer epitaxial structure. Microwave HBTs with current gains h(FE) = 50 and f(T) and f(max) values of 42 GHz and 117 GHz, respectively, are reported.

引用

页码：141 / 142

页数：2

共 6 条

[1] CARBON-DOPED BASE GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING CARBON-TETRACHLORIDE AS A DOPANT SOURCE [J].