RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100)

被引：131

作者：

LEWIS, BF ^{[1
]}

LEE, TC ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

MADHUKAR, A ^{[1
]}

FERNANDEZ, R ^{[1
]}

MASERJIAN, J ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582887

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：419 / 424

页数：6

共 14 条

[11] DISORDER ON GAAS(001) SURFACES PREPARED BY MOLECULAR-BEAM EPITAXY
VANHOVE, JM
COHEN, PI
LENT, CS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02): : 546 - 550
[12] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
VANHOVE, JM
LENT, CS
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 741 - 746
[13] CLEANING CHEMISTRY OF GAAS(100) AND INSB(100) SUBSTRATES FOR MOLECULAR-BEAM EPITAXY
VASQUEZ, RP
LEWIS, BF
GRUNTHANER, FJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 791 - 794
[14] STRUCTURAL ORIGIN OF OPTICAL BOWING IN SEMICONDUCTOR ALLOYS
ZUNGER, A
JAFFE, JE
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (08) : 662 - 665