INFLUENCE OF THERMAL TREATMENTS ON THE DISTRIBUTION OF CONTAMINATING COPPER NEAR THE SURFACE OF SILICON - A COMPARATIVE SIMS AND XPS STUDY

被引：13

作者：

BALLUTAUD, D ^{[1
]}

DEMIERRY, P ^{[1
]}

AUCOUTURIER, M ^{[1
]}

DARQUECERETTI, E ^{[1
]}

机构：

[1] ECOLE MINES PARIS,CEMEF,CNRS,URA 1374,F-06565 VALBONNE,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1991年 / 47卷 / 01期

关键词：

Heat Treatment--Annealing - Mass Spectrometry--Applications - Semiconductor Materials--Heat Treatment - Spectroscopy; Photoelectron--Applications - Surfaces--Spectroscopic Analysis;

D O I：

10.1016/0169-4332(91)90096-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Quantitative analysis of the concentration profile of copper introduced into silicon by mechanochemical polishing is performed by XPS and SIMS techniques. The evolution of the copper distribution after thermal treatments (450, 750, 900-degrees-C) is followed by the same techniques. The results show that an important segregation towards the surface and the near-surface regions occurs during the thermal annealings. Electron-probe X-ray images and SIMS ionic images, as well as the quantitative analysis show that copper is in a precipitated state, sometimes associated with oxygen and carbon.

引用

页码：1 / 8

页数：8

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