PHOSPHORUS GETTERING AND INTRINSIC GETTERING OF NICKEL IN SILICON

[1] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 825 - 836

[2] BOURRET A, ULTRAMICROSCOPY

[3] GIBSON JM, 1983, DEFECTS SEMICONDUCTO, V2, P395

[4] GOLD GETTERING IN SILICON BY PHOSPHORUS DIFFUSION AND ARGON IMPLANTATION - MECHANISMS AND LIMITATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5090 - 5097

[5] MATLOCK JH, 1983, ASTM STP, V804, P332

[6] DIRECT COMPARISON OF ION-DAMAGE GETTERING AND PHOSPHORUS-DIFFUSION GETTERING OF AU IN SI [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 600 - 609

[7] SHAIKH AA, 1983, THESIS U GOTTINGEN

[8] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 175 - 176

[9] SIMULTANEOUS GETTERING OF AU IN SILICON BY PHOSPHORUS AND DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 442 - 444

[1] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 825 - 836

[2] BOURRET A, ULTRAMICROSCOPY

[3] GIBSON JM, 1983, DEFECTS SEMICONDUCTO, V2, P395

[4] GOLD GETTERING IN SILICON BY PHOSPHORUS DIFFUSION AND ARGON IMPLANTATION - MECHANISMS AND LIMITATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5090 - 5097

[5] MATLOCK JH, 1983, ASTM STP, V804, P332

[6] DIRECT COMPARISON OF ION-DAMAGE GETTERING AND PHOSPHORUS-DIFFUSION GETTERING OF AU IN SI [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 600 - 609

[7] SHAIKH AA, 1983, THESIS U GOTTINGEN

[8] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 175 - 176

[9] SIMULTANEOUS GETTERING OF AU IN SILICON BY PHOSPHORUS AND DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 442 - 444