ELIMINATING DOPANT DIFFUSION AFTER ION-IMPLANTATION BY SURFACE ETCHING

Implantation damage is believed to play a significant role in dopant diffusion. Described here is an attempt to modify the point defect damage profile of a 40 keV, Si-29 implant in GaAs by chemically etching away the top 100 angstrom of the sample after implantation. In these samples, no Si diffusion was observed after annealing, while significant Si redistribution did occur in a similar sample which received no post-implant etch. TRIM simulations predict an excess Ga vacancy surface layer and excess Ga interstitials deeper in the sample. It is thought that by removing the vacancy-rich surface layer, the etch alters the implant damage profile and thus the diffusion behavior of the Si. Surface effects from etching as related to the Si diffusion are shown to be consistent with a vacancy-assisted diffusion mechanism. Evidence that this model may be applicable to B implants in Si is also shown.