A NEW MOS INTEGRATED-CIRCUIT FABRICATION USING SI3N4 FILM SELF-ALIGNMENT LIFTOFF TECHNIQUES

被引：3

作者：

YACHI, T

YAMAUCHI, N

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1109/T-ED.1982.20691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：243 / 247

页数：5

共 11 条

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