SPIN-VALVE MEMORY ELEMENTS USING [(CO-PT/CU/NI-FE-CO)/CU] MULTILAYERS

被引：20

作者：

IRIE, Y

SAKAKIMA, H

SATOMI, M

KAWAWAKE, Y

机构：

[1] Central Research Laboratory, Matsushita Electric Industrial Co., Ltd., Kyoto, 3-4 Hikaridai, Seikacho Souraku-gun

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 4A期

关键词：

MAGNETORESISTANCE; SPIN-VALVE MEMORY; MRAM; CO-PT; CU; NI-FE-CO;

D O I：

10.1143/JJAP.34.L415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new type of magnetoresistive memory using spin-valve multilayers composed of semi-hard magnetic layers and soft magnetic layers separated with nonmagnetic layers was developed. The fabricated memory element was composed of a word line of An film and a magnetoresistive sense line of [(CoPt/Cu/NiFeCo)/Cu](N) multilayers. This spin-valve memory has nonvolatile and nondestructive readout properties.

引用

页码：L415 / L417

页数：3

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