X-RAY PHOTOELECTRON-SPECTROSCOPY MEASUREMENT OF VALENCE-BAND OFFSETS FOR MG-BASED SEMICONDUCTOR COMPOUNDS

被引：45

作者：

WANG, MW ^{[1
]}

SWENBERG, JF ^{[1
]}

PHILLIPS, MC ^{[1
]}

YU, ET ^{[1
]}

MCCALDIN, JO ^{[1
]}

GRANT, RW ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] ROCKWELL INT CORP,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 25期

关键词：

D O I：

10.1063/1.111239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used x-ray photoelectron spectroscopy to measure the valence-band offsets for the lattice matched MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te heterojunctions grown by molecular beam epitaxy. By measuring core level to valence-band maxima and core level to core level binding energy separations, we obtain values of 0.56+/-0.07 eV and 0.43+/-0.11 eV for the valence-band offsets of MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te, respectively. Both of these values deviate from the common anion rule, as may be expected given the unoccupied cation d orbitals in Mg. Application of our results to the design of current II-VI wide band-gap light emitters is discussed.

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页码：3455 / 3457

页数：3

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