CMOS VLSI SINGLE EVENT TRANSIENT CHARACTERIZATION

被引：16

作者：

HEILEMAN, SJ ^{[1
]}

EISENSTADT, WR ^{[1
]}

FOX, RM ^{[1
]}

WAGNER, RS ^{[1
]}

BORDES, N ^{[1
]}

BRADLEY, JM ^{[1
]}

机构：

[1] UNIV CALIF LOS ALAMOS SCI LAB,LOS ALAMOS,NM 87544

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2287 / 2291

页数：5

共 11 条

[1]

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[3]

HSIEH CM, 1983, IEEE T ELECTRON DEV, V30, P686, DOI 10.1109/T-ED.1983.21190

[4] ANALYTIC EXPRESSIONS FOR THE CRITICAL CHARGE IN CMOS STATIC RAM CELLS [J].

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FOX, RM ;

DIEHL, SE .

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[5]

JAEGER RC, 1985, 6TH P BIEN U GOV IND

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1646-1650

[9] CHARGE COLLECTION MEASUREMENTS FOR HEAVY-IONS INCIDENT ON N-TYPE AND P-TYPE SILICON [J].

OLDHAM, TR ;

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4493-4500

[10] TRANSIENT MEASUREMENTS OF ULTRAFAST CHARGE COLLECTION IN SEMICONDUCTOR DIODES [J].

WAGNER, RS ;

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SINHA, DN ;

HAMMOND, RB .

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