CARRIER DISTRIBUTION AND LOW-FIELD RESISTANCE IN SHORT N+-N--N+ AND N+-P--N+ STRUCTURES

被引:30
作者
VANDERZIEL, A
SHUR, MS
LEE, K
CHEN, TH
AMBERIADIS, K
机构
关键词
D O I
10.1109/T-ED.1983.21086
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:128 / 137
页数:10
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共 15 条
  • [1] MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE
    AWANO, Y
    TOMIZAWA, K
    HASHIZUME, N
    KAWASHIMA, M
    [J]. ELECTRONICS LETTERS, 1982, 18 (03) : 133 - 135
  • [2] CANDRA A, 1980, SOLID STATE ELECTRON, V23, P516
  • [3] BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE
    EASTMAN, LF
    STALL, R
    WOODARD, D
    DANDEKAR, N
    WOOD, CEC
    SHUR, MS
    BOARD, K
    [J]. ELECTRONICS LETTERS, 1980, 16 (13) : 524 - 525
  • [4] HOLLIS MA, 1981, THESIS CORNELL U ITH
  • [5] CONDUCTANCE OF SMALL SEMICONDUCTOR-DEVICES
    KASTALSKY, AA
    SHUR, MS
    [J]. SOLID STATE COMMUNICATIONS, 1981, 39 (06) : 715 - 718
  • [6] KASTALSKY AA, 1981, 8TH P BIENN CORN EL
  • [7] KNOL KS, 1950, PHILIPS RES REP, V5, P131
  • [8] REES H, 1977, ELECTRON LETT, P156
  • [9] Rhoderick E.H., 1978, METAL SEMICONDUCTORS
  • [10] IMPORTANCE OF BOUNDARY-CONDITIONS TO CONDUCTION IN SHORT SAMPLES
    ROSENBERG, JJ
    YOFFA, EJ
    NATHAN, MI
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 941 - 944